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LHF32KZR
Table 3. Bus Operations(BYTE#=V IH )
12
Mode
Notes RP#
BE 0 #
BE 1L # BE 1H # OE# WE# Address V PP
DQ 0-15
STS
Read
Output Disable
Standby
Bank0
Bank1
Disable
Bank0
Bank1
Bank0,1
Bank0,1
1,2,3,9,
10
3
3
V IH
V IH
V IH
V IL
V IL
V IL
V IL
V IL
V IL
X
V IH
V IL
V IH
V IL
V IL
V IH
V IL
V IH
X
V IH
V IL
V IL
V IL
V IL
V IH
V IH
X
V IL
V IH
X
V IH
V IH
X
X
X
X
X
X
X
D OUT
High Z
High Z
X
X
X
Deep Power-Down
4
V IL
X
X
X
X
X
X
X
High Z High Z
Read Identifier
Codes
Query
Bank0
Bank1
Disable
Bank0
Bank1
Disable
9,10
9,10
V IH
V IH
V IL
V IL
V IL
V IL
V IL
V IL
V IL
V IH
V IL
V IL
V IH
V IL
V IH
V IL
V IL
V IH
V IL
V IL
V IL
V IL
V IH
V IH
See
Figure 4
See Table
7~11
X
X
Note 5 High Z
Note 6 High Z
Write
Bank0
Bank1
Bank0,1
3,7,8,9 V IH
V IL
V IL
V IL
V IL
V IH
V IL
V IH
V IL
V IL
V IH
V IL
X
X
D IN
X
Table 3.1. Bus Operations(BYTE#=V IL )
Mode
Notes RP#
BE 0 #
BE 1L # BE 1H # OE# WE# Address V PP
DQ 0-7
STS
Read
Output Disable
Standby
Bank0
Bank1
Disable
Bank0
Bank1
Bank0,1
Bank0,1
1,2,3,9,
10
3
3
V IH
V IH
V IH
V IL
V IL
V IL
V IL
V IL
V IL
X
V IH
V IL
V IH
V IL
V IL
V IH
V IL
V IH
X
V IH
V IL
V IL
V IL
V IL
V IH
V IH
X
V IL
V IH
X
V IH
V IH
X
X
X
X
X
X
X
D OUT
High Z
High Z
X
X
X
Deep Power-Down
4
V IL
X
X
X
X
X
X
X
High Z High Z
Read Identifier
Codes
Query
Bank0
Bank1
Disable
Bank0
Bank1
Disable
9,10
9,10
V IH
V IH
V IL
V IL
V IL
V IL
V IL
V IL
V IL
V IH
V IL
V IL
V IH
V IL
V IH
V IL
V IL
V IH
V IL
V IL
V IL
V IL
V IH
V IH
See
Figure 4
See Table
7~11
X
X
Note 5 High Z
Note 6 High Z
Write
Bank0
Bank1
Bank0,1
3,7,8,9 V IH
V IL
V IL
V IL
V IL
V IH
V IL
V IH
V IL
V IL
V IH
V IL
X
X
D IN
X
NOTES:
1. Refer to DC Characteristics. When V PP ≤ V PPLK , memory contents can be read, but not altered.
2. X can be V IL or V IH for control pins and addresses, and V PPLK or V PPH1/2/3 for V PP . See DC Characteristics for
V PPLK and V PPH1/2/3 voltages.
3. STS is V OL (if configured to RY/BY# mode) when the WSM is executing internal block erase, bank erase, (multi)
word/byte write or block lock-bit configuration algorithms. It is floated during when the WSM is not busy, in block
erase suspend mode with (multi) word/byte write inactive, (multi) word/byte write suspend mode, or deep power-
down mode.
4. RP# at GND ± 0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. See Section 4.5 for query data.
7. Command writes involving block erase, bank erase, (multi) word/byte write or block lock-bit configuration are
reliably executed when V PP =V PPH1/2/3 and V CC =V CC1/2/3/4 .
8. Refer to Table 4 for valid D IN during a write operation.
9. Don’t use the timing both OE# and WE# are V IL .
10.Impossible to perform read from both banks at a time. Both BE 0 # and BE 1L #, BE 1H # must not be low at the
same time.
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